ACTA

Ferromagnetic Transition in Ge_1-xMn_xTe Layers

W. Knoff^a, V. Domukhovski^a, K. Dybko^a, P. Dziawa^a, R. Jakieła^a, E. Łusakowska^a, A. Reszka^b, K. Świątek^a, B. Taliashvili^a, T. Story^a, K. Szałowski^c and T. Balcerzak^c
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^bFaculty of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-185 Warsaw, Poland
^cDepartment of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland

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Ferromagnetic transition temperature in thin layers of diluted magnetic (semimagnetic) semiconductor Ge_1-xMn_xTe was studied experimentally by SQUID magnetometry method and analyzed theoretically for a model Ising type diluted magnetic system with Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction. The key features of the experimentally observed dependence of the Curie temperature on Mn content (x ≤ 0.12) and conducting hole concentration p = (1-10) × 10²¹ cm^-3 were reproduced theoretically for realistic valence band and crystal lattice parameters of p-Ge_1-xMn_xTe taking into account short carrier mean free path encountered in this material and Ruderman-Kittel-Kasuya-Yosida mechanism with both delta like and diffused character of spatial dependence of the exchange coupling between magnetic ions and free carriers.

DOI: 10.12693/APhysPolA.116.904
PACS numbers: 75.50.Pp, 75.30.Et, 81.15.Hi