Ferromagnetic Transition in Ge1-xMnxTe Layers
W. Knoffa, V. Domukhovskia, K. Dybkoa, P. Dziawaa, R. Jakiełaa, E. Łusakowskaa, A. Reszkab, K. Świąteka, B. Taliashvilia, T. Storya, K. Szałowskic and T. Balcerzakc
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b Faculty of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-185 Warsaw, Poland
c Department of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
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Ferromagnetic transition temperature in thin layers of diluted magnetic (semimagnetic) semiconductor Ge1-xMnxTe was studied experimentally by SQUID magnetometry method and analyzed theoretically for a model Ising type diluted magnetic system with Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction. The key features of the experimentally observed dependence of the Curie temperature on Mn content (x ≤ 0.12) and conducting hole concentration p = (1-10) × 1021 cm-3 were reproduced theoretically for realistic valence band and crystal lattice parameters of p-Ge1-xMnxTe taking into account short carrier mean free path encountered in this material and Ruderman-Kittel-Kasuya-Yosida mechanism with both delta like and diffused character of spatial dependence of the exchange coupling between magnetic ions and free carriers.
DOI: 10.12693/APhysPolA.116.904
PACS numbers: 75.50.Pp, 75.30.Et, 81.15.Hi