Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
T. Andrearczyka, T. Wosińskia, A. Mąkosaa, T. Figielskia, J. Wróbela and J. Sadowskia, b
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b MAX Lab, Lund University, 22100 Lund, Sweden
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We designed and investigated four arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
DOI: 10.12693/APhysPolA.116.901
PACS numbers: 73.50.Jt, 75.50.Pp, 75.30.Gw, 75.60.Ch, 85.75.-d