Spectral Distribution of Photoelectric Efficiency οf Thin Film CdS/CdTe Heterostructure
L. Kosyachenkoa, G. Lashkarevb, E. Grushkoa, A. Ievtushenkob, V. Sklyarchuka, X. Mathewc and P.D. Paulsond
a Chernivtsi National University, 58012 Chernivtsi, Ukraine
b Institute for Problems of Material Science, NASU, 03142 Kiev, Ukraine
c Centro de Investigacion en Energía-UNAM, 62580, Temixco, Morelos, Mexico
d Institute of Energy Conversion, University of Delaware, Newark, DE 19711, USA
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The spectral distribution of the quantum efficiency in thin film CdS/CdTe solar cells is being investigated by taking into account the drift and diffusion components of photocurrent, recombination at the CdS-CdTe interface, the back surface of the CdTe absorber layer and in the space charge region. The effect of uncompensated acceptor concentration, lifetime of minority carriers and surface recombination velocity on the charge collection efficiency are discussed. The losses caused by reflections and absorption in the CdS and indium tin oxide layers are also considered.
DOI: 10.12693/APhysPolA.116.862
PACS numbers: 84.60.Jt, 85.60.Dw, 73.61.Ga