Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions
V.P. Makhniy, S.V. Khusnutdinov and V.V. Gorley
Yuri Fedkovych Chernivtsi National University, 2 Kotsybynsky Str., 58012 Chernivtsi, Ukraine
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The p-ZnO/n-ZnSe heterojunction was prepared by the photothermal oxidation of ZnSe substrate. Current- voltage characteristics are measured and discussed. The potential barrier height is equal to 3 eV at 300 K and its anomalous temperature coefficient reported here is due to the high defects concentration ( ≈ 1014 cm-2) on the interface. It is established that forward current in p-n junction is limited by the recombination processes in the space charge region, carriers tunneling and above the barrier emission. The reverse current is determined by tunneling processes at low bias and avalanche effect at high bias.
DOI: 10.12693/APhysPolA.116.859
PACS numbers: 73.40.Lq