Pressure Dependence of the Light Emission in Zinc Blende InGaAs/GaAs and InGaN/GaN Quantum Wells |
| S.P. Łepkowski and I. Gorczyca
Unipress - Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland |
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| We present theoretical study of the pressure coefficient of the light emission (dEE/dP) in compressively strained zinc blende InGaAs/GaAs and InGaN/GaN quantum wells, grown in a (001) direction. We investigate the contributions to dEE/dP arising from (i) third order (nonlinear) elasticity, (ii) nonlinear elasticity, originating from pressure dependence of elastic constants, and (iii) nonlinear dependence of elastic constants on composition in InGaAs and InGaN alloys. The obtained results indicate that the use of nonlinear elasticity is essential for determination of dEE/dP in the strained InGaAs/GaAs and InGaN/GaN quantum wells, while the inclusion of the nonlinear dependence of elastic constants on composition of InGaAs and InGaN alloys does not improve agreement between the theoretical end experimental values of dEE/dP in the considered structures. |
| DOI: 10.12693/APhysPolA.116.857 PACS numbers: 62.20.D-, 62.50.-p, 81.40.Jj, 78.67.De |