Transport Properties of Disordered Graphene Layers

M. Gryglas Borysiewicza, B. Jouaulta, b, c, J. Tworzydłod, S. Lewińskaa, W. Strupińskie and J.M. Baranowskia a Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland b UMR 5650, CNRS, cc074, pl. Eugene Bataillon, 34095 Montpellier cedex 5, France c Groupe d'Etude des Semiconducteurs, Université Montpellier 2, cc074, pl. Eugene Bataillon, 34095 Montpellier Cedex 5, France d Institute of Theoretical Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland e Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity ρxy is nonlinear as a function of B, which can be described using a many carrier model.

DOI: 10.12693/APhysPolA.116.838 PACS numbers: 73.21.Ac, 72.20.Fr, 73.43.Qt, 73.63.Bd