Optical Absorption and Raman Scattering Studies of Few Layer Epitaxial Graphene Grown on 4H-SiC Substrates

K. Grodeckia, b, A. Drabińskaa, R. Bożeka, A. Wysmołeka, K.P. Koronaa, W. Strupińskib, J. Borysiuka, R. Stępniewskia and J.M. Baranowskia, b a Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland b Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Optical absorption and Raman scattering studies of few layer epitaxial graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) on axis substrates are presented. Changing the pressure and annealing time, different stages of the graphene formation were achieved. Optical absorption measurements enabled us to establish average number of graphene layers covering the SiC substrate. Raman scattering experiments showed that integrated intensity of the characteristic 2D peak positively correlated with the number of graphene layers deposited on the SiC substrate. The spectral width of the 2D peak was found to decrease with the number of the deposited graphene layers.

DOI: 10.12693/APhysPolA.116.835 PACS numbers: 78.66.Tr, 78.40.Ri, 78.30.Na, 63.20.dd, 63.20.kd