Transverse Acoustoelectric Effect Applying in Surface Study of GaP:Te(111) |
| B. Pustelnya and T. Pustelnyb
a Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland b Department of Optoelectronics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland |
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| The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te(111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime τ of minority carrier in the near surface region and the surface potential Vs in GaP:Te(111) surfaces after their different technological treatments were determined. |
| DOI: 10.12693/APhysPolA.116.383 PACS numbers: 72.80.Ey, 73.61.Ey, 73.61.Jc, 85.30.-z, 71.20.Mq |