Theoretical Study of Energy Levels and Transition Probabilities of Boron Atom

Zhang Tian Yi and Zheng Neng Wu Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P.R. China

Received: April 20, 2009

Full Text PDF

Though the electrons configuration for boron atom is simple and boron atom has long been of interest for many researchers, the theoretical studies for properties of BI are not systematic, there are only few results reported on energy levels of high excited states of boron, and transition measurements are generally restricted to transitions involving ground states and low excited states without considering fine structure effects, provided only multiplet results, values for transitions between high excited states are seldom performed. In this article, by using the scheme of the weakest bound electron potential model theory calculations for energy levels of five series are performed and with the same method we give the transition probabilities between excited states with considering fine structure effects. The comprehensive set of calculations attempted in this paper could be of some value to workers in the field because of the lack of published calculations for the BI systems. The perturbations coming from foreign perturbers are taken into account in studying the energy levels. Good agreement between our results and the accepted values taken from NIST has been obtained. We also reported some values of energy levels and transition probabilities not existing on the NIST data bases.

DOI: 10.12693/APhysPolA.116.141 PACS numbers: 01.55.+b, 31.15.-p