Micro-Raman Study of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition Using Different Bi/Fe Ratio Precursors |
| T. Nakamura, H. Fukumura, N. Hasuike, H. Harima
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan |
| Y. Nakamura
Institute for Chemical Research, Kyoto University, Kyoto 611-0011, Japan |
| K. Kisoda
Department of Physics, Wakayama University, Wakayama 640-8510, Japan |
| S. Nakashima and M. Okuyama
Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan |
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| BiFeO3 thin films were grown by chemical solution deposition using precursors with different elemental ratios, Bi/Fe = 1.1/1.0, 1.0/1.0 and 1.0/1.1. All the samples consisted of two easily distinguishable components of crystalline and amorphous phases. We have found that the electric properties of BiFeO3 thin films are closely connected to the crystallinity of the films. |
| DOI: 10.12693/APhysPolA.116.72 PACS numbers: 78.30.Hv, 63.20.D-, 78.30.-j |