Magnetoresistive Properties of Manganite-Based Heterojunctions
J. Devenson, B. Vengalis, V. Lisauskas, A.K. Oginskis, F. Anisimovas, and S. A┼ímontas
Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania
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Hole doped La2/3Ba1/3MnO3 (LBaMO), La2/3Ca1/3MnO3 (LCaMO) and La2/3Ce1/3MnO3 (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb doped SrTiO3(100) (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > Ud where Ud is the interfacial potential, corresponding to a steep current increase at a forward bias.
DOI: 10.12693/APhysPolA.115.1130
PACS numbers: 75.70.-i, 71.30.+h, 73.50.-h