Effect of Growth Parameters on Composition Distribution in Superlattice in Well Structure by Submonolayer Deposition Technique
Guo Zhi Jia a, Jiang Hong Yaob, Yong Chun Shub, Xiao Dong Xingb and Biao Pib
a Tianjin Institute of Urban Construction, Tianjin 300384, China,
b The Key Lab of Advanced Technique and Fabrication for Weak Light Nonlinear Photonics Materials, Ministry of Education, TEDA Applied Physics School, Nankai University, Tianjin 300475, China
Received: February 16, 2009; In final form: April 15, 2009
Full Text PDF
The superlattice in well structures were grown using a cycled submonolayer AlGaAs/GaAs deposition technique. The optical quality of Al-Ga interdiffusion in AlGaAs/GaAs superlattice was investigated by measuring the photoluminescence of samples grown at temperature from 610°C to 630°C. Results show that Al composition can be modulated under some growth temperature or period. Effect of the growth interrupt in the growth process of superlattice on film optical quality is also discussed. Especially, the role played by the period of superlattice in the process of obtaining high quality film material with low composition is investigated in detail.
DOI: 10.12693/APhysPolA.115.944
PACS numbers: 81.15.Hi, 68.55.Ln, 68.65.Fg, 68.65.Cd