Characterized Microstructure and Electrical Properties of Hydrogenated Nanocrystalline Silicon Films by Raman and Electrical Conductivity Spectra
Gao Xiao-Yong a,b, Zhao Jian-Tao a, Liu Yu-Fen a, Lin Qing-Geng a, Chen Yong-Sheng a, Gu Jin-Hua a, Yang Shi-E a and Lu Jing-Xiao a
a The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, 450052 Zhengzhou, China
b School of Physics and Engineering, Zhengzhou University, 450052 Zhengzhou, China
Received: October 1, 2008; In final form: October 21, 2008;
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Microstructure and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) film deposited on glass substrate at low temperature were characterized by average grain size, crystallinity, and dark electrical conductivity data obtained from the Raman and electrical conductivity spectroscopy, respectively. The average grain size, crystallinity and electrical conductivity have a similar change with substrate temperature. A threshold substrate temperature determined by silane concentration appears in their corresponding spectroscopy vs. substrate temperature. The dependence of crystallinity, average grain size and electrical conductivity on substrate temperature were accounted for by surface diffusion model and heterojunction quantum dot model, respectively.
DOI: 10.12693/APhysPolA.115.738
PACS numbers: 71.23.Cq, 73.61.-r