Determination of Some Kinetic Parameters of Fast Surface States in Silicon Single Crystals by Means of Surface Acoustic Wave Method
T. Pustelny, A. Opilski and B. Pustelny
Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
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The paper presents the acoustic method for determining some parameters of fast surface states in semiconductors. This method uses the interactions of the phonon-electron type for determining both the effective carrier lifetime τ influenced by the fast surface energetic states and the velocity g of the carrier trapped by the surface states. Some experimental results of the parameters τ and g in near-surface region of real Si(111) samples for their various surface treatments, obtained by the offered method, are presented.
DOI: 10.12693/APhysPolA.114.A-183
PACS numbers: 72.50.+b, 77.65.Dq, 73.50.Rb, 73.20.-r, 73.61.-r