Determination of Some Kinetic Parameters of Fast Surface States in Silicon Single Crystals by Means of Surface Acoustic Wave Method |
| T. Pustelny, A. Opilski and B. Pustelny
Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland |
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| The paper presents the acoustic method for determining some parameters of fast surface states in semiconductors. This method uses the interactions of the phonon-electron type for determining both the effective carrier lifetime τ influenced by the fast surface energetic states and the velocity g of the carrier trapped by the surface states. Some experimental results of the parameters τ and g in near-surface region of real Si(111) samples for their various surface treatments, obtained by the offered method, are presented. |
| DOI: 10.12693/APhysPolA.114.A-183 PACS numbers: 72.50.+b, 77.65.Dq, 73.50.Rb, 73.20.-r, 73.61.-r |