Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer
A. Babiński a, M. Czyż a, A. Golnik a, J. Borysiuk b, S. Kret c, S. Raymond d, J. Lapointe d and Z.R. Wasilewski d
a Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
b Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
c Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
d Institute for Microstructural Sciences, NRC, Ottawa, Ontario, K1A 0R6, Canada
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Received: 7 06 2008;
It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T<70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
DOI: 10.12693/APhysPolA.114.1055
PACS numbers: 73.21.La, 78.55.Cr, 78.67.Hc