Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As
T. Andrearczyk a, T. Wosiński a, T. Figielski a, A. Mąkosa a, J. Sadowski a, b, Z. Tkaczyk a, E. Łusakowska a and J. Wróbel a
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b MAX-Lab, Lund University, 22100 Lund, Sweden
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Received: 7 06 2008;
We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic Ga0.92Mn0.08As layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
DOI: 10.12693/APhysPolA.114.1049
PACS numbers: 73.50.Jt, 75.50.Pp, 75.30.Gw, 75.60.Ch