Atomic Force Microscopy Study of a Voltage Effect on CdZnTe Crystal Dimensions
M. Aleszkiewicz a, b, P. Aleszkiewicz a, T. Wojciechowski a, K. Fronc a, V. Kolkovsky a, E. Janik a, R. Jakieła a, A. Mycielski a and G. Karczewski a
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b Dept. Mathematics and Natural Sciences, College of Sciences, UKSW, Warsaw, Poland
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Received: 7 06 2008;
In this work we studied the influence of an external electric voltage on spatial dimensions of CdZnTe mixed crystals. In order to get an absolute magnitude of the sample thickness and to gain insight to the changes of lateral dimension, in quasi-bulk 3 μm thick CdZnTe layers grown by molecular beam epitaxy square craters were formed by ion sputtering in a secondary ion mass spectrometer. The vertical and lateral dimensions of the craters were studied by the atomic force microscopy. The atomic force microscopy measurement revealed that the thickness of the CdZnTe layer increases in a result of applying a single voltage pulse to the sample surface and decreases reversibly after applying reversely biased voltage. The voltage triggering was high enough to switch the conductivity state of the sample i.e., the effect of thickness change is accompanied by the effect of conductivity switching. The thickness change is significant, reaching several percents of the entire layer thickness.
DOI: 10.12693/APhysPolA.114.1041
PACS numbers: 73.40.Ns, 73.61.Ga, 77.90.+k