Influence of Ion Implantation on Magnetic Structural and Optical Properties of (Ga,Mn)As Epitaxial Films
O. Yastrubchak a, M. Kulik a, J. Żuk a, J.Z. Domagała b, R. Szymczak b, T. Wosiński b, J. Sadowski b, c and A.L. Tóth d
a Institute of Physics, UMCS, pl. Marii Curie-Skłodowskiej 5, 20-031 Lublin, Poland
b Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland
c MAX-Lab, Lund University, 22100 Lund, Sweden
d Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1525 Budapest, Hungary
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Received: 7 06 2008;
We performed implantation experiments, applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga, Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen implantation and confirmed the preservation of high structural and optical quality of the neon implanted (Ga, Mn)As films.
DOI: 10.12693/APhysPolA.114.1445
PACS numbers: 75.50.Pp, 78.30.Fs