2008

Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
A. Wójcik-Jedlińska a, J. Muszalski a, M. Bugajski a and M. Łukowski b
a Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
b Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 02-662 Warsaw, Poland
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Received: 7 06;
In this paper we demonstrate how the tuning of the VECSEL heterostructure can be precisely determined. Since the VECSEL active region is embodied in a microcavity, the photoluminescence signal collected from the chip surface is modified by the resonance of this cavity. The angle resolved photoluminescence measurements combined with the temperature tuning of the structure allowed us to precisely determine VECSEL emission features. The investigated structure consists of GaAs cavity with six InGaAs quantum wells and is designed for lasing at 980 nm.
DOI: 10.12693/APhysPolA.114.1437
PACS numbers: 42.55.Px, 85.35.Be, 78.67.De, 42.55.Sa, 42.55.Xi