Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and Cd0.99Mn0.01Te
J. Trzmiel, E. Płaczek-Popko, K. Weron, J. Szatkowski and E. Wojtyna
Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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Received: 7 06 2008;
The low temperature non-exponential transients of photoconductivity build-up in gallium doped Cd0.99Mn0.01Te and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of Cd0.99Mn0.01Te:Ga the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.
DOI: 10.12693/APhysPolA.114.1417
PACS numbers: 71.55.Gs, 61.72.jj, 78.20.Bh