Epitaxial Growth and Optical Properties of PbTe/CdTe Semiconductor Heterostructures |
| M. Szot, L. Kowalczyk, E. Smajek, V. Domukhovski, J. Domagała, E. Łusakowska, B. Taliashvili, P. Dziawa, W. Knoff, M. Wiater, T. Wojtowicz and T. Story
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland |
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| Received: 7 06 2008; |
| Growth optimization, optical and structural properties of PbTe/CdTe multilayers grown by molecular beam epitaxy on GaAs (001) as well as on BaF2 (111) substrates is reported. An intense photoluminescence in the mid-infrared region is observed from PbTe quantum wells excited with 1.17 eV pulsed YAG:Nd laser. The energy of the emission peak shows blue shift with decreasing PbTe well width and has a positive temperature coefficient. The influence of thermal annealing on photoluminescence spectra of PbTe/CdTe multilayers grown on BaF2 substrate is discussed. |
| DOI: 10.12693/APhysPolA.114.1391 PACS numbers: 78.55.Hx, 78.67.De, 78.67.Hc, 78.67.Pt |