Epitaxial Growth and Optical Properties of PbTe/CdTe Semiconductor Heterostructures
M. Szot, L. Kowalczyk, E. Smajek, V. Domukhovski, J. Domagała, E. Łusakowska, B. Taliashvili, P. Dziawa, W. Knoff, M. Wiater, T. Wojtowicz and T. Story
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
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Received: 7 06 2008;
Growth optimization, optical and structural properties of PbTe/CdTe multilayers grown by molecular beam epitaxy on GaAs (001) as well as on BaF2 (111) substrates is reported. An intense photoluminescence in the mid-infrared region is observed from PbTe quantum wells excited with 1.17 eV pulsed YAG:Nd laser. The energy of the emission peak shows blue shift with decreasing PbTe well width and has a positive temperature coefficient. The influence of thermal annealing on photoluminescence spectra of PbTe/CdTe multilayers grown on BaF2 substrate is discussed.
DOI: 10.12693/APhysPolA.114.1391
PACS numbers: 78.55.Hx, 78.67.De, 78.67.Hc, 78.67.Pt