Terahertz Detection by the Entire Channel of High Electron Mobility Transistors

M. Sakowicz a, J. Łusakowski a, K. Karpierz a, W. Knap a, M. Grynberg a, K. Köhler b, G. Valusis c, K. Gołaszewska d, E. Kamińska d, A. Piotrowska d, P. Caban e and W. Strupiński e a Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland b Fraunhofer-Institut für Angewandte Festkörperphysik, D-79108 Freiburg, Germany c Semiconductor Physics Institute, A. Goštauto 11, Vilnius LT-01108, Lithuania, and Institute of Materials Science and Applied Research, Vilnius University, Sauletekio av. 9, LT-10222, Vilnius, Lithuania d Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland e Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Received: 7 06 2008;

GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.

DOI: 10.12693/APhysPolA.114.1343 PACS numbers: 75.75.+a, 78.20.Ls, 85.30.Tv, 07.57.Kp