GaMnAs: Layers, Wires and Dots
J. Sadowski
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland, and MAX-Lab, Lund University, 221 00 Lund, Sweden
Full Text PDF
Received: 7 06 2008;
Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich MnAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.
DOI: 10.12693/APhysPolA.114.1001
PACS numbers: 75.50.Pp, 62.23.Hj, 81.16.Hc