Characterization of ZnO Films Grown at Low Temperature

E. Przeździecka a, T. Krajewski a, A. Wójcik-Głodowska a, S. Yatsunenko a, E. Łusakowska a, W. Paszkowicz a, E. Guziewicz a, Ł. Wachnicki a, b, A. Szczepanik a, b, M. Godlewski a, b a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland b Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

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Received: 7 06 2008;

ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.

DOI: 10.12693/APhysPolA.114.1303 PACS numbers: 78.55.-m, 81.10.-h, 85.30.Fg