Study of the Defect Structure of Hg1-xCd1-xTe Films by Ion Milling

M. Pociask a, I.I. Izhnin b, E.S. Ilyina b, S.A. Dvoretsky c, N.N. Mikhailov c, Yu.G. Sidorov c, V.S. Varavin c and K.D. Mynbaev d a Institute of Physics, University of Rzeszów, Rejtana 16A, 35-310 Rzeszów, Poland b R&D Institute for Materials SRC "Carat", Lviv, 79031, Ukraine c A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 623900, Russia d A.F. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, 194021, Russia

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Received: 7 06 2008;

A study of the defect structure of heteroepitaxially grown Hg1-xCd1-xTe (MCT) films was performed with the use of ion milling. Undoped and in situ As- (acceptor) or In- (donor) doped films with x=0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration≈1017 cm-3, formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of 1015 cm-3, which is typical of high-quality MCT.

DOI: 10.12693/APhysPolA.114.1293 PACS numbers: 73.61.Ga, 61.80.Jh, 66.30.Lw