Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy
A.M. Mizerov, V.N. Jmerik, V.K. Kaibyshev, T.A. Komissarova, S.A. Masalov, A.A. Sitnikova and S.V. Ivanov
Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya str., St. Petersburg 194021, Russia
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Received: 7 06 2008;
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al2O3 substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(000bar1) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(000bar1) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature TS≈760°C and Ga to activated nitrogen flux ratio FGa/FN*≈1.8.
DOI: 10.12693/APhysPolA.114.1253
PACS numbers: 78.55.Cr, 81.05.Ea, 81.15.Hi