ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors |
| M. Łukasiewicz a, A. Wójcik-Głodowska b, E. Guziewicz b, R. Jakieła b, T. Krajewski b, E. Łusakowska b, W. Paszkowicz b, R. Minikayev b, M. Kiecana b, M. Sawicki b, M. Godlewski a, b, Ł. Wachnicki a, b and A. Szczepanik a, b
a Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland b Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland |
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| Received: 7 06 2008; |
| In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature (Ts=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)2) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films. |
| DOI: 10.12693/APhysPolA.114.1235 PACS numbers: 68.55.Ln, 68.55.Nq, 78.66.Hf, 81.15.Kk |