Hybrid Organic/ZnO p-n Junctions with n-Type ZnO Grown by Atomic Layer Deposition
G. Łuka a, T. Krajewski a, A. Szczerbakow a, E. Łusakowska a, K. Kopalko a, E. Guziewicz a, Ł. Wachnicki a, b, A. Szczepanik a, b, M. Godlewski a, b and J.D. Fidelus c
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b Cardinal Stefan Wyszyński University, College of Science, Department of Mathematics and Natural Sciences, Dewajtis 5, 01-815 Warsaw, Poland
c Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
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Received: 7 06 2008;
We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
DOI: 10.12693/APhysPolA.114.1229
PACS numbers: 68.55.J-, 73.40.Lq, 81.05.Lg