Ferromagnetism of Narrow-Gap Ge1-x-ySnxMnyTe and Layered In1-xMnxSe Semiconductors

G.V. Lashkarev a, V.I. Sichkovskyi a, M.V. Radchenko a, A.I. Dmitriev a, V.E. Slyn'ko a, E.I. Slyn'ko a, Z.D. Kovalyuk a, P.E. Butorin a, b, W. Knoff c, T. Story c, R. Szymczak c, R. Jakieła c, P. Aleshkevych c and W. Dobrowolski c a Institute for Problems of Material Science, National Academy of Sciences of Ukraine, 3 Krzhizhanovskogo str., Kyiv, Ukraine b Joint Institute for Nuclear Research, Dubna, Russia c Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Received: 7 06 2008;

Magnetic susceptibility, Hall effect and resistivity of narrow-gap Ge1-x-ySnxMnyTe single crystals (x=0.083÷0.115; y=0.025÷0.124) were investigated in the temperature range 4.2-300 K revealing a ferromagnetic ordering at TC≈50 K. Temperature dependence of magnetization indicates a superparamagnetic phase with magnetic clusters arranging in a spin glass state below the freezing temperature Tf . Magnetic structure of InSe〈Mn〉 2D-ferromagnetic single crystals was studied by SQUID magnetometry, neutron diffraction, secondary ion mass spectroscopy, and wave dispersive spectra. Hysteresis loops of magnetization were observed at least up to 350 K. The cluster model of ferromagnetism is considered. The formation of self-assembled superlattice ferromagnetic InSe:Mn/antiferromagnetic MnSe during growth process and further annealing was established.

DOI: 10.12693/APhysPolA.114.1219 PACS numbers: 72.20.My, 75.50.Pp, 75.30.Et, 77.80.Bh