Hole-Related Electrical Activity of InAs/GaAs Quantum Dots
P. Kruszewski a, L. Dobaczewski a, b, V.P. Markevich b, C. Mitchell b, M. Missous b and A.R. Peaker b
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b Microelectronics and Nanostructure Group, School of Electrical, and Electronic Engineering, The University of Manchester, Manchester, UK
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Received: 7 06 2008;
We present the hole-related electrical activity of the InAs quantum dots embedded in the n-type GaAs. We performed our experiments with the use of the Laplace and conventional deep level transient spectroscopies combined with the above GaAs band-gap illumination. We observed that depending on temperature and electric field the hole emission process is an interplay between the pure thermal emission and tunnelling processes. The tunnelling was quantitatively described by a simple model of the potential barrier.
DOI: 10.12693/APhysPolA.114.1201
PACS numbers: 73.21.La, 79.40.+z