InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas

K.P. Korona a, A. Drabińska a, K. Surowiecka a, L. Wołowiec a, J. Borysiuk b, P. Caban b and W. Strupiński b a Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland b Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Received: 7 06 2008;

We present investigations of GaInN/GaN/AlGaN structure containing cavity designed so that the electric field inside it can be changed by illumination. Numerical calculations show that illumination can change carrier distributions and consequently change the field and potential. The electric field influences properties of a quantum well placed in the cavity. We confirmed experimentally that the electric field controlled by external bias or by optical pumping, can change energy and occupation of electronic states in the quantum well. The quantum well energy could be changed of about 80 meV by voltage and 15 meV by illumination.

DOI: 10.12693/APhysPolA.114.1179 PACS numbers: 73.61.Ey, 78.55.Cr, 72.40.+w