Magnetic Properties of Epitaxial (Ge,Mn)Te Thin Films with Varying Crystal Stoichiometry
W. Knoff a, V. Domukhovski a, K. Dybko a, P. Dziawa a, M. Górska a, R. Jakieła a, E. Łusakowska a, B. Taliashvili a, T. Story a, A. Reszka b and J.R. Anderson c, C.R. Rotundu c
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b Faculty of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-185 Warsaw, Poland
c Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742, USA
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Received: 7 06 2008;
Magnetization of 1 μm thick ferromagnetic IV-VI (Ge, Mn)Te semiconductor layers with 10 at.% of Mn was studied by SQUID magnetometry method up to the magnetic fields of 70 kOe. The layers were grown on BaF2 (111) substrates by molecular beam epitaxy with varying Te molecular flux, which permitted the control of layer stoichiometry and conducting hole concentration. X-ray diffraction and in situ electron diffraction characterization of layer growth and crystal structure revealed two-dimensional mode of growth and monocrystalline rhombohedral crystal structure of (Ge, Mn)Te layers. Controlling the layer stoichiometry influences the temperature dependence of magnetization with the ferromagnetic Curie temperature varying in Ge0.9Mn0.1Te layers from Tc=30 K (low Te flux) to Tc=42 K (high Te flux).
DOI: 10.12693/APhysPolA.114.1159
PACS numbers: 75.50.Pp