New Semiconductor Devices | |
| F. Balestra
Sinano Institute, IMEP (CNRS-INPG-UJF), Grenoble INP-Minatec, 3 Parvis Louis Néel, BP 257, 38016 Grenoble cedex 1, France | |
| Full Text PDF | |
| Received: 7 06 2008; | |
| A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented. | |
| DOI: 10.12693/APhysPolA.114.945 PACS numbers: 72.20.-i, 73.20.-r, 73.21.-b, 73.23.-b, 73.30.+y, 73.40.-c, 73.50.-h, 73.63.-b |