Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures

A. Ievtushenko a, G. Lashkarev a, V. Lazorenko a, V. Karpyna a, V. Sichkovskyi a, L. Kosyachenko b, V. Sklyarchuk b, O. Sklyarchuk b, V. Bosy c, F. Korzhinski c, A. Ulyashin d, V. Khranovskyy e and R. Yakimova e a Institute for Problems of Material Science, NASU, Krzhyzhanovskyy str. 3, 03142, Kiev, Ukraine b Chernivtsi National University, Kotsyubinsky str. 2, 58012, Chernivtsi, Ukraine c JSCP SPU "Saturn", 50-let Oktybrya av. 2b, 03148, Kiev, Ukraine d SINTEF Materials and Chemistry, Forskningsveien 1, Blindern, NO-0314 Oslo, Norway e Linkoping University, Department of Physics, Chemistry and Biology (IFM), 58183 Linköping, Sweden

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Received: 7 06 2008;

Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ = 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈102 at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.

DOI: 10.12693/APhysPolA.114.1123 PACS numbers: 81.05.Dz, 81.15.Cd, 85.60.Dw, 72.40.+w