Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping |
S.V. Gronin a, S.V. Sorokin a, I.V. Sedova a, P.S. Kop'ev a, S.V. Ivanov a, M.M. Zverev b, N.A. Gamov b, D.V. Peregoudov b and V.B. Studionov b
a Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia b Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia |
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Received: 7 06 2008; |
The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈ 8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed. |
DOI: 10.12693/APhysPolA.114.1115 PACS numbers: 78.55.Et, 78.67.Hc |