Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping
S.V. Gronin a, S.V. Sorokin a, I.V. Sedova a, P.S. Kop'ev a, S.V. Ivanov a, M.M. Zverev b, N.A. Gamov b, D.V. Peregoudov b and V.B. Studionov b
a Ioffe Physico-Technical Institute of RAS, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
b Moscow Institute for Radio Engineering, Electronics and Automation, Vernadskogo 78, Moscow 119454, Russia
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Received: 7 06 2008;
The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 μm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈ 8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.
DOI: 10.12693/APhysPolA.114.1115
PACS numbers: 78.55.Et, 78.67.Hc