Zero Field Spin Splitting in GaN/AlGaN Heterostructures Probed by the Weak Antilocalization

K. Dybko a, M. Siekacz b and C. Skierbiszewski b a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland b High Pressure Research Center, PAS, Sokołowska 29/37, 01-142 Warsaw, Poland

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Received: 7 06 2008;

We present the magnetoconductivity measurements of a high mobility two-dimensional electron gas confined at GaN/AlGaN interface. The sensitive measurements of low field conductivity revealed both quantum corrections, the weak localization and antilocalization effects. It indicates the importance of the spin-orbit coupling in this wide band gap material. The analysis of the data provided the information about the temperature dependence of the dephasing time and total spin-orbit relaxation time. The conduction band spin splitting energy amounts to 0.23 meV and 0.35 meV at electron densities 2.2×1012 cm-2 and 5.7×1012 cm-2, respectively.

DOI: 10.12693/APhysPolA.114.1109 PACS numbers: 71.70.Ej, 73.43.Qt, 73.20.Fz