Ti-Al-N MAX Phase, a Candidate for Ohmic Contacts to n-GaN
M.A. Borysiewicz a, E. Kamińska a, A. Piotrowska a, I. Pasternak a, R. Jakieła b and E. Dynowska b
a Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
b Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
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Received: 7 06 2008;
Fabrication of a Ti2AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means ofmbox X-ray diffraction and secondary ion mass spectroscopy. Successful Ti2AlN monocrystalline growth was observed on GaN and Al2O3 substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti2AlN layers showed ohmic behaviour with contact resistivities in the range 10-4 Ω cm2.
DOI: 10.12693/APhysPolA.114.1061
PACS numbers: 61.05.cp, 68.49.Sf, 68.55.ag, 81.40.Ef