Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

S. Lazzez a, K. Boubaker a, T. Ben Nasrallah a, M. Amlouk a, S. Belgacem a, M. Mnari b and R. Chtourou c a Unitéde Physique des DispositifsáSemiconducteurs, - Facultédes Sciences de Tunis, Universitéde Tunis El Manar, 2092 Tunis, Tunisia b Laboratoire de Chimie Analytique et d'Electrochimie, - Facultédes Sciences de Tunis, Universitéde Tunis El Manar, 2092 Tunis, Tunisia c Laboratoire de Photovoltaïque et des Matériaux Semiconducteurs, Institut National de Recherche Scientifique et Technique (INRST), Hammam-Lif, Tunisia

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Received: 14 05 2008;

In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320ºC. The molar ratio between zinc and indium x=[Zn2+]/[In3+] was varied in 0-0.4 domain whereas [S2- ]/[In3+] one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x=0 is formed by binary material In2S3 with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and ZnIn2 S4. On the contrary, for x=0.4, the film is mainly formed by the ternary compound ZnIn2S4 which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy Eg increases slightly as a function of the x composition (Eg varies from 2.6 to 2.9 eV).

DOI: 10.12693/APhysPolA.114.869 PACS numbers: 79.60.Dp, 78.66.Li, 78.30.Am