Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

A.J. Janavičius a, S. Balakauskas b, V. Kazlauskienė c, A. Mekys d, R. Purlys d and J. Storasta c,d a Faculty of Natural Sciences,v Siauliai University, P. Višinskio 19, 77156Šiauliai, Lithuania b Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania c Institute of Material Science and Applied Researches, Vilnius University, Saulėtekio al. 9, bld. 3, 2040 Vilnius, Lithuania d Faculty of Physics, Vilnius University, Saulėtekio al. 9, bld. 3, 2040 Vilnius, Lithuania

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Received: 25 06 2007; Revised version: 11 06 2008;

We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated by soft X-rays was obtained experimentally. In this work, we presented experimentally obtained diffusion coefficients of singly and doubly negatively charged long-lived excited vacancies. These high concentration charged metastable vacancies (about 1013 cm-3) at room temperature can very fast diffuse changing electrical conductivity and the Hall mobility of carriers. We measured the superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, which were not affected by X-rays. In this paper, we presented the obtained superdiffusion profiles of boron and phosphorus in crystalline silicon measured with secondary-ion mass spectrometer.

DOI: 10.12693/APhysPolA.114.779 PACS numbers: 66.30.-h, 78.70.Ck