Zr, ZrN and Zr/Al Thin Films Deposition Using Arc Evaporation and Annealing |
| J. Čyvienė and J. Dudonis
Department of Physics, Kaunas University of Technology, Studentu 50, LT-51368 Kaunas, Lithuania |
| Full Text PDF |
| Received: 14 11 2007; Revised version: 12 03 2008; |
| The chemical reactions are widely used for the layers of different composition formation. However, synthesis mechanism is a complicated process in thin films/layers system, and is not completely studied. The purpose of this paper was to analyze the kinetics of chemical compounds in reaction, to produce ZrO2 thin films using arc evaporation and annealing (post-deposition), and to analyze them. The pure zirconium (Zr) and zirconium nitride (ZrN) were deposited using arc evaporation. 10% mol of aluminum was evaporated on a few Zr films. All deposited films were annealed in the air atmosphere gradually changing the temperature from 400ºC to 1100ºC in order to produce ZrO2 films. The formation processes of the new phase were studied. Activation energy of the reactions was calculated. Structural properties were measured using X-ray diffraction, optical properties - using ellipsometry. Tetragonal phase of ZrO2 was obtained in the annealing process of ZrO2/Al thin film in the air atmosphere of 800ºC. |
| DOI: 10.12693/APhysPolA.114.769 PACS numbers: 51.10.+y, 81.15.Ef, 83.80.Ab |