Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γIrradiation and High Temperature-High Pressure Treatment

K. Wieteska a, A. Misiuk b, M. Prujszczyk b, W. Wierzchowski c, B. Surma c, J. Bąk-Misiuk d, P. Romanowski d, A. Shalimov d, I. Capan e, D. Yang f and W. Graeff g a Institute of Atomic Energy, 05-400 Otwock,Świerk, Poland b Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland c Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland d Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland e Materials Physics, Rudjer Boskovic Institute, 10000 Zagreb, Croatia f State Key Laboratory of Silicon Materials, Zhenjiang University, Hangzhou 310027, China g HASYLAB at DESY, Notkestr. 85, 22603 Hamburg, Germany

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Received: 24 09 2007;

Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (cO) up to 1.1×1018 cm-3, admixed with N or Ge (Si-N, cN≤1.2×1015 cm-3, or Si-Ge, cGe≈7×1017 cm-3, respectively), pre-annealed at up to 1400 K and next irradiated with γ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.

DOI: 10.12693/APhysPolA.114.439 PACS numbers: 61.05.c-, 61.72.-y, 61.82.-d