X-Ray High-Resolution Diffraction and Transmission Topography Study of InGaAs Grown by Liquid Encapsulated Czochralski Technique
G. Kowalski a, J. Gronkowski a, J. Borowski a and A. Hruban b
a Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
b Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
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Received: 24 09 2007;
New results on ternary InGaAs crystals grown using liquid encapsulated Czochralski technique with constant liquid composition are reported. X-ray high-resolution diffractometry (rocking curves and reciprocal space maps) as well as X-ray topography using the transmission Lang setup were used. Growth history of the bulk ingots was revealed.
DOI: 10.12693/APhysPolA.114.391
PACS numbers: 61.72.Dd, 07.85.Jy, 81.10.Fq