Doped Carrier Formulation of the t-J model: Monte Carlo Study of the Anisotropic Case
A. Ferraz a, E. Kochetov a, b, M.M. Maśka c and M. Mierzejewski c
a International Center of Condensed Matter Physics, Universidade de Brasilia, Caixa Postal 04667, 70910-900 Brasilia, DF, Brazil
b Bogolyubov Theoretical Laboratory, Joint Institute for Nuclear Research, 141980 Dubna, Russia
c Institute of Physics, University of Silesia, 40-007 Katowice, Poland
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Received: 6 11 2007;
We derive a doped carrier representation of the t-J model Hamiltonian. Within this approach the t-J model is described in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. This representation of the t-J Hamiltonian is very convenient for underdoped systems since close to half-filling it allows for a controlled treatment of the crucial constraint of no doubly occupied sites. When neglecting the transverse spin-spin interaction, the effective Hamiltonian can be investigated with classical Monte Carlo simulations. We discuss the results obtained for systems consisting of several hundred lattice sites.
DOI: 10.12693/APhysPolA.114.185
PACS numbers: 74.20.-z, 74.62.Dh