Doped Carrier Formulation of the t-J model: Monte Carlo Study of the Anisotropic Case |
A. Ferraz^{ a}, E. Kochetov^{ a, b}, M.M. Maśka^{ c} and M. Mierzejewski^{ c}
^{a } International Center of Condensed Matter Physics, Universidade de Brasilia, Caixa Postal 04667, 70910-900 Brasilia, DF, Brazil ^{b }Bogolyubov Theoretical Laboratory, Joint Institute for Nuclear Research, 141980 Dubna, Russia ^{c }Institute of Physics, University of Silesia, 40-007 Katowice, Poland |
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Received: 6 11 2007; |
We derive a doped carrier representation of the t-J model Hamiltonian. Within this approach the t-J model is described in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. This representation of the t-J Hamiltonian is very convenient for underdoped systems since close to half-filling it allows for a controlled treatment of the crucial constraint of no doubly occupied sites. When neglecting the transverse spin-spin interaction, the effective Hamiltonian can be investigated with classical Monte Carlo simulations. We discuss the results obtained for systems consisting of several hundred lattice sites. |
DOI: 10.12693/APhysPolA.114.185 PACS numbers: 74.20.-z, 74.62.Dh |