Depth Profiling of Defects in He Implanted SiO2

S. Mariazzi a, L. Toniutti a, R.S. Brusa a, M. Duarte Naia b, A. Karbowski c and G.P. Karwasz c a Dipartimento di Fisica, Universitàdegli Studi di Trento, 38050 Povo, Trento, Italy b Dep. Física, Universidade de Trás-os Montes e Alto Douro, 5001-801 Vila Real, Portugal c Instytut Fizyki, Uniwersytet Mikołaja Kopernika, 87-100 Toruń, Poland

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Received: 3 09 2007;

Thin layer of SiO2 thermally grown on p-type Si was implanted with He+ ions at 30 keV with a dose of 5×1015 ions/cm2. SiO2/Si samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.

DOI: 10.12693/APhysPolA.113.1447 PACS numbers: 71.60.+z, 78.70.Bj, 68.55.-a, 61.82.Ms, 61.72.J-