Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy

W. Anwand a, Th. Schumann a, G. Brauer a, W. Skorupa a, S.Z. Xiong b, C.Y. Wu c and T. Gebel d a Forschungszentrum Dresden-Rossendorf, PF 510 119, 01314 Dresden, Germany b Institute of Photoelectronics, Nankai University, Tianjin 300071, China c Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China d FHR Anlagenbau GmbH, 01458 Ottendorf-Okrilla, Germany

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Received: 3 09 2007;

Flash lamp annealing was applied to the modification of thin amorphous Si layers on SiO2 and glass. Slow positron implantation spectroscopy was used for the characterisation of the microstructure before and after flash lamp annealing. Changes in the structure down to a depth of some micrometres below the surface observed with slow positron implantation spectroscopy will be presented and discussed.

DOI: 10.12693/APhysPolA.113.1273 PACS numbers: 61.80.Ba, 78.70.Bj, 81.05.Ea, 81.07.Bc