Properties of Neutron Doped Multicrystalline Silicon for Solar Cells
C. Pochrybniak a, K. Pytel a, J.J. Milczarek a, J. Jaroszewicz a, M. Lipiński b, T. Piotrowski c and J. Kansy d
a Institute of Atomic Energy,Świerk, 05-400 Otwock, Poland
b Institute of Metallurgy and Materials Science, Polish Academy of Sciences, Reymonta 25, 30-059 Cracow, Poland
c Institute of Electron Technology, Warsaw, Poland
d University of Silesia, Bankowa 12, 40-007 Katowice, Poland
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Received: 3 06 2007;
The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.
DOI: 10.12693/APhysPolA.113.1255
PACS numbers: 81.40.Wx, 71.60.-i, 78.70.Bj, 61.80.-x