Fast Electrical Switching of Thin Manganite Films

S. Balevičius a, b, V. Stankevič a, b, N. Žurauskienė a, b, O. Kiprijanovič a, A. Česnys b, S. Tolvaišienė b, A. Abrutis c and V. Plaušinaitienė a,c a Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania b Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius, Lithuania c Vilnius University, Dep. of General and Inorganic Chemistry, Naugarduko 24, Vilnius, Lithuania

Full Text PDF

Received: 26 08 2007;

The effects of strong pulsed electric field on the electrical properties of thin epitaxial La0.7Sr0.3MnO3 films were investigated. The fast electrical switching from high resistance off-state to low resistance on-state was obtained at current densities higher than 106 A/cm2. This current was able to induce an irreversible damage of the sample in the regions at the edges of the electrodes of the film. It was demonstrated that thermal effects are responsible for appearance of delay time and asymmetrical shape of current channel in on-state, however, the fast switching from off- to on-state is a result of electronic effects appearing when critical power is reached in the film.

DOI: 10.12693/APhysPolA.113.821 PACS numbers: 75.47.Lx, 75.47.Gk, 73.50.Fq