Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection
M. Tabe, R. Nuryadi, D. Moraru, Z.A. Burhanudin, K. Yokoi and H. Ikeda
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Received: 26 08 2007;
Recently, there have been increasing demands for controlling individual electrons, photons, and dopants in developing nm scale Si devices. Our most recent results on Si single-electron nano-devices will be presented. We have demonstrated single-electron transfer in random-tunnel-junctions by a cycle of ac gate bias, detection of photons and detection of individual acceptor ions by Si single-hole transistor.
DOI: 10.12693/APhysPolA.113.811
PACS numbers: 73.21.La, 73.23.Hk