Formation of Porous n-A3B5 Compounds
I. Šimkiene a, A. Kindurys a, M. Treideris a and J. Sabataityte a,b
a Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
b Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius, Lithuania
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Received: 26 08 2007;
Porous layers of A3B5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5 × 1.5 cm2) porous layers of uniform porosity were produced by anodization process of n-type A3B5 semiconductors, GaAs, InP, and GaP.
DOI: 10.12693/APhysPolA.113.1085
PACS numbers: 81.05.-t, 81.05.Rm, 81.05.Ea