Mesoscopic Structures, for Microwave-THz Detection
A. Sužiediėlis a, S. Ašmontas a, J. Požela a, J. Kundrotas a, E. Širmulis a, J. Gradauskas a, A. Kozič a, V. Kazlauskaité a and T. Anbinderis b
a Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
b Elmika Ltd, Naugarduko Str. 41, 03227 Vilnius, Lithuania
Full Text PDF
Received: 26 08 2007;
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
DOI: 10.12693/APhysPolA.113.803
PACS numbers: 73.21.Fg, 73.40.Kp, 73.50.Lw, 73.63.Kv